G. Baccarani, M. Rudan, et al.
VLSI Design
Review
Numerical solution of the hydrodynamic model for a one-dimensional semiconductor device
Abstract
A numerical implementation of a discretization scheme of the hydrodynamic model for submicron devices is described and applied to a one-dimensional ballistic diode.* The performance of the numerical method and the physical results of the simulation for different biases and lattice temperatures, and a brief comparison to Monte Carlo simulations, are also given. © 1987, MCB UP Limited
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