Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Paper
Observation by resonant tunneling of high-energy states in GaAs-Ga1-xAlxAs quantum wells
Abstract
The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone. © 1986 The American Physical Society.
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