Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
We have found a novel form of ordering in Al0.5In0.5As and (Ga,Al)0.5In0.5As as grown on (001) substrates by molecular beam epitaxy (MBE). Electron diffraction patterns reveal a four-fold periodicity along the [110] direction as well as the more usual two-fold periodicity along 〈111〉 directions. The morphology of the latter type of ordering is also different from its normal form. © 1993.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
T.N. Morgan
Semiconductor Science and Technology
J.Z. Sun
Journal of Applied Physics
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000