Sudhanshu S. Jha, J.A. Kash, et al.
Physical Review B
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
Sudhanshu S. Jha, J.A. Kash, et al.
Physical Review B
J.A. Kash, J.C. Tsang
Journal of Crystal Growth
Z.A. Weinberg, D.R. Young, et al.
Journal of Applied Physics
J.C. Tsang, J. Freeouf, et al.
Physical Review B