J.A. Kash, J.C. Tsang, et al.
IEEE Journal of Solid-State Circuits
Paper
Observation of amorphous silicon regions in silicon-rich silicon dioxide films
Abstract
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
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