Japanese Journal of Applied Physics

Paper

01 Jan 1980

On Al–SiO₂interfaces and oxidation temperatures

View publication

Abstract

No abstract available.

Paper

Impact ionization model for dielectric instability and breakdown

T.H. Distefano, M. Shatzkes

Applied Physics Letters

Paper

Impact ionization model for dielectric instability and breakdown

T.H. Distefano, M. Shatzkes

Applied Physics Letters

Paper

Barrier inhomogeneities on a sisingle bond signSiO₂ interface by scanning internal photoemission

T.H. Distefano

Applied Physics Letters

Paper

Electrical-resistivity model for polycrystalline films: The case of arbitrary reflection at external surfaces

A.F. Mayadas, M. Shatzkes

Physical Review B

View all publications