Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Paper
On the splitting of the exciton ground state in silicon
Abstract
The exciton ground state in silicon is calculated taking into accoun the effect of the split-off valence band. We show that this effect is very important. The anisotropy splitting of the ground state is found to be 0.32 meV, while a previous analysis, which neglected the split-off band, gave 0.46 meV. The new result is in good agreement with recent experimental data. © 1979.
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