Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
A review is given of experiments on the conductance of 1D MOSFET's. The types of samples studied, the phenomena observed and our theoretical understanding of these phenomena are discussed. Particular attention is given to the strong localization regime and the structure in the conductance as a function of gate voltage. © 1984.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Eloisa Bentivegna
Big Data 2022
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001