G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Paper
One-dimensional conductance in silicon mosfet's
Abstract
A review is given of experiments on the conductance of 1D MOSFET's. The types of samples studied, the phenomena observed and our theoretical understanding of these phenomena are discussed. Particular attention is given to the strong localization regime and the structure in the conductance as a function of gate voltage. © 1984.
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