R. Ghez, J.S. Lew
Journal of Crystal Growth
A review is given of experiments on the conductance of 1D MOSFET's. The types of samples studied, the phenomena observed and our theoretical understanding of these phenomena are discussed. Particular attention is given to the strong localization regime and the structure in the conductance as a function of gate voltage. © 1984.
R. Ghez, J.S. Lew
Journal of Crystal Growth
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules