Robert W. Keyes
Physical Review B
Paper
Optical analysis of wet chemically etched InGaAs/InP wires
Abstract
We have investigated the influence of the sidewall recombination on the photoluminescence intensity of wet etched InGaAs/InP wires. We observe a strong influence of the sidewall recombination for low excitation powers (≈10W/cm2) independent of the particular etchant used. By using an Na2S-passivation layer the nonradiative sidewall recombination can be suppressed completely. © 1992.
Related
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials