Physical Review Letters

Paper

29 Jun 1987

Pantelides responds [2]

View publication

Abstract

No abstract available.

Paper

Electronic structure of the Ge-GaAs and Ge-ZnSe (100) interfaces

J. Pollmann, Sokrates T. Pantelides

Physical Review B

Paper

Scattering-theoretic method for defects in semiconductors. II. Self-consistent formulation and application to the vacancy in silicon

J. Bernholc, Nunzio O. Lipari, et al.

Physical Review B

Paper

Electronic structure and spectra of heavily doped n-type silicon

Annabella Selloni, Sokrates T. Pantelides

Physical Review Letters

Paper

Microscopic theory of impurity-defect reactions and impurity diffusion in silicon

Roberto Car, Paul J. Kelly, et al.

Physical Review Letters

View all publications