Peter J. Price
Surface Science
Paper
Patterning of 100 nm features using X-ray lithography
Abstract
Patterning of 100 nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E, UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed. ©1997TAPJ.
Related
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992