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True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
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Paper
Patterning of 100 nm features using X-ray lithography
Abstract
Patterning of 100 nm critical dimension features using X-ray proximity lithography is discussed. Lithographic performance is shown using photoresists APEX-E, UV-4 and an experimental formulation of ESCAP photoresist. Conditions to pattern isolated and nested lines at maximum permissible gap is discussed. ©1997TAPJ.
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