Patterning of poly-para-xylylenes by reactive ion etching

Poly-para-xylylene family thin films deposited by vapor phase polymerization are pin hole free and are chemically inert to most acids, alkalies, and organic solvents. These properties make this material very attractive as a passivation agent on top of devices. This paper discusses the patterning of such films on planar structures by various masking techniques and the reactive ion etching (RIE) of the poly(monochloro-p-xylylene) in an oxygen-containing plasma, including details like etch rates, control of edge profiles (vertical or tapered), and the process parameters to achieve patterns of 1.5 μm wide and below. © 1983, American Vacuum Society. All rights reserved.