Conference paper
True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Paper
Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions
Abstract
The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC. © 1983 AIME.
Related
John G. Long, Peter C. Searson, et al.
JES
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings