F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Paper
Persistent photoconductivity in AlGaAs/GaAs modulation doped layers and field effect transistors: A review
Abstract
The phenomenon of persistent photoconductivity in AlGaAs/GaAs modulation-doped layers and transistors is reviewed. Experimental observations, mechanisms which are responsible for it and structures for its elimination are discussed. © 1986.
Related
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992