Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
We present a high-resolution x-ray-scattering study of the temperature-dependent structure of Si(111) vicinally miscut by 4°along the 110 direction. At temperatures below 1159 K, the surface phase separates into flat 7×7 terraces and densely stepped regions, in agreement with previous reports. The angle between the phase-separated regions shows a temperature dependence consistent with both entropic and strain-induced step-step repulsive interactions. At temperatures above 1159 K, the surface is shown to exist as a single, logarithmically rough phase; the observed scattering line shapes demonstrate the presence of a long-range step-step repulsion of a magnitude comparable to the entropic repulsion. © 1995 The American Physical Society.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
T.N. Morgan
Semiconductor Science and Technology
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989