William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Spectroscopic properties of aggregate color centers in polycrystalline NaF thin films are measured for the first time by photochemical holeburning. A comparison with single crystals shows that the density of the color centers, and both the inhomogeneous linewidth and holewidth are increased in the polycrystalline material. Also studied are the effects of two different irradiation sources (neutrons and X‐rays) in single crystal samples. The excited state lifetime T1 of the 6070 Å centers is found to be very similar in all the samples. Copyright © 1984 WILEY‐VCH Verlag GmbH & Co. KGaA
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
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Surface Review and Letters
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MRS Fall Meeting 2020
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