Photoconductivity and function properties of polyacetylene films

Photoconductivity and photovoltaic effects of AsF5-doped and undoped trans-(CH)x films have been measured at room temperature in the wavelength region from 0.3 to 3.5 μm. The photovoltaic response threshold at 1.48 eV, measured on Schottky barrier junctions with a low work function metal, is interpreted as the single particle band-gap of trans-(CH)x. I-V and C-V characteristics of the junctions indicate that good Schottky barriers are formed between lightly doped p-type (CH)x and low work function metals. Evidence for ∼ 2 × 1018 cm-3 deep traps in both doped and undoped trans-(CH)x is obtained from analysis of these characteristics. © 1980.