Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
An analytical model for trapping-state photodepopulation measurements in conductor-thin-film-insulator-conductor structures is presented. The external-circuit-current dependence on applied voltage is determined, and it is shown that moments of the spatial distribution of trapped charge in the insulator can be extracted from collected-charge versus applied-field characteristic curves. The photodepopulation technique is compared with more widely used differential-capacitance and phtoemission-current techniques. © 1974 The American Physical Society.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
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ADMETA 2011
John G. Long, Peter C. Searson, et al.
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I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992