Plasma-Developable Photoresist Systems Based on Chemical Amplification

This paper reports work on two chemically amplified resist systems that can be developed in an oxygen plasma environment. These systems are based on the catalytic photogeneration of functional groups within the resist film that react, in a subsequent step, with a silylating agent that is delivered in the gas phase. As a result, the organosilicon species is selectively and covalently incorporated into the exposed regions of the resist film. When the silylated film is exposed to an oxygen plasma, the regions that do not contain the organosilicon species are etched to the substrate, whereas those areas containing silicon are not etched. This generates a negative tone relief image. The chemical mechanisms and lithographic properties of these systems will be discussed. © 1991, American Chemical Society. All rights reserved.