Plasma oxidation of silicon

In this paper, techniques for the oxidation of silicon in microwave, r.f. and d.c. oxygen plasmas are reviewed. Oxidation of silicon in an r.f. oxygen plasma appears promising as a low temperature oxidation process, since it has been demonstrated for silicon wafers of large diameter. Rapid and uniform oxide growth has been achieved at temperatures as low as 300 °C. The physical and electrical properties of plasma oxides are comparable with those of thermal oxides grown at 1000 °C. Devices fabricated using a plasma oxidation process have characteristics similar to those fabricated using conventional high temperature oxidation. © 1981.