K.P. Rodbell, K.N. Tu, et al.
Physical Review B
Paper
Porosity in plasma enhanced chemical vapor deposited SiCoH dielectrics: A comparative study
Abstract
The study of porosity in plasma enhanced chemical vapor deposited SiCOH dielectrics was presented. It was found that the SiCOH films with k = 2.8 had no detectable porosity. It was shown that the pore size increases with decreasing k, however the diameter remains below 5 nm for k = 2.05, most of the pores being smaller than 2.5 nm.
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