PaperPreparation and properties of solution-grown epitaxial p - N junctions in gapM.R. Lorenz, M.H. PilkuhnJournal of Applied Physics
PaperRotational levels of shallow acceptor states: The undulation spectra of N in GaPT.N. Morgan, M.R. Lorenz, et al.Physical Review Letters
PaperBand structure and direct transition electroluminescence in the In 1-xGaxP alloysM.R. Lorenz, W. Reuter, et al.Applied Physics Letters