D.A. Shirley, Yu Zheng, et al.
Journal of Electron Spectroscopy and Related Phenomena
Paper
Pulsed ion beam irradiation of silicon
Abstract
The effects of intense pulsed H+, B+ and Ba+ beam irradiation of single crystal Si and of ion implantation damaged Si have been studied by spreading resistance measurement, backscattering and channeling, and TEM. This paper reports the measurements and their correlation. The observations are fully consistent with ordinary melting and solidification of the upper layers of Si. © 1982.
Related
Heather Fraser, Edgar L Mounib, et al.
Healthcare financial management : journal of the Healthcare Financial Management Association
Andreana Gomez, Sergio Gonzalez, et al.
Toxics
Niall P. Hardy, Pol Mac Aonghusa, et al.
Surgical Endoscopy