J.C. Tsang, M.S. Dresselhaus, et al.
Physical Review B
The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
J.C. Tsang, M.S. Dresselhaus, et al.
Physical Review B
J.C. Tsang, J.E. Smith, et al.
Physical Review Letters
T.F. Kuech, P.J. Wang, et al.
Journal of Crystal Growth
J.C. Tsang, Y. Yokota, et al.
Applied Physics Letters