Conference paper
Watching chips work: Optical imaging of hot carriers in ICs
J.C. Tsang
ECS Meeting 2002
The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
J.C. Tsang
ECS Meeting 2002
M.A. Tischler, R.T. Collins
Solid State Communications
L. Viña, R.T. Collins, et al.
Superlattices and Microstructures
P.J. Wang, T.F. Kuech, et al.
Journal of Crystal Growth