Raman spectroscopy of CySi1-y alloys grown by molecular beam epitaxy

J.C. Tsang; K. Eberl; Stefan Zollner; Subramanian S. Iyer

doi:10.1063/1.107742

Applied Physics Letters

Paper

01 Dec 1992

Raman spectroscopy of C_ySi_1-y alloys grown by molecular beam epitaxy

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Abstract

Raman spectroscopy has been used to observe the C local mode in epitaxial CySi1-y layers grown by molecular beam epitaxy. The scattering cross section per C atom is independent of alloy concentration for y<2%. Lattice relaxation about substitutional C sites induces an extra peak near 475 cm-1.

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