Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We study numerically the resistance fluctuations, R, in a disordered metallic microstructure with several probes within a single quantum coherent region. The strong influence of the probes causes R to depend on the geometry of the coherent region. In a particular four-probe structure, R is only weakly dependent on the voltage probe separation, in agreement with experiment, while the strong dependence of R on separation in other structures should be experimentally observable. Nonlocal fluctuations decay slowly as the distance between the current path and voltage probes increases. © 1988 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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MRS Fall Meeting 2020
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Advanced Materials
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