Resonant Fowler-Nordheim tunneling in n-GaAs-undoped Al xGa1-xAs-n+GaAs capacitors

T.W. Hickmott; P. Solomon; R. Fischer; H. Morkoç

doi:10.1063/1.94564

Applied Physics Letters

Paper

01 Dec 1984

Resonant Fowler-Nordheim tunneling in n^-GaAs-undoped Al _xGa_1-xAs-n⁺GaAs capacitors

View publication

Abstract

Periodic structure is observed in the current-voltage characteristics at 4.2 K of n-GaAs-AlxGa1-xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa 1-xAs thicknesses of 30-35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler-Nordheim tunneling.

Paper

On the establishment of an inversion layer in p- and n-type silicon substrates under conditions of high oxide fields

P. Solomon

Applied Physics Letters

Conference paper

Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE

P. Solomon, A. Palevski, et al.

IEDM 1989

Paper

Room-temperature electron trapping in Al_0.35Ga _0.65As/GaAs modulation-doped field-effect transistors

Marshall I. Nathan, P.M. Mooney, et al.

Applied Physics Letters

Conference paper

S-parameter characterization of GaAs gate SISFETs at liquid nitrogen temperatures

Y. Kwark, P. Solomon, et al.

IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1989

View all publications

Abstract

Related

On the establishment of an inversion layer in p- and n-type silicon substrates under conditions of high oxide fields

Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE

Room-temperature electron trapping in Al0.35Ga 0.65As/GaAs modulation-doped field-effect transistors

S-parameter characterization of GaAs gate SISFETs at liquid nitrogen temperatures

Room-temperature electron trapping in Al_0.35Ga _0.65As/GaAs modulation-doped field-effect transistors