Resonant Fowler-Nordheim tunneling in n^-GaAs-undoped Al _xGa_1-xAs-n⁺GaAs capacitors

Periodic structure is observed in the current-voltage characteristics at 4.2 K of n-GaAs-AlxGa1-xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa 1-xAs thicknesses of 30-35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler-Nordheim tunneling.