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Paper
Resonant Fowler-Nordheim tunneling in n-GaAs-undoped Al xGa1-xAs-n+GaAs capacitors
Abstract
Periodic structure is observed in the current-voltage characteristics at 4.2 K of n-GaAs-AlxGa1-xAs-n+GaAs capacitors, grown by molecular beam epitaxy, which have AlxGa 1-xAs thicknesses of 30-35 nm. The periodicities can be explained quantitatively by the theory of resonant Fowler-Nordheim tunneling.
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