Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
A general theory of resonance tunneling in planar structures, independent of the detailed form of the "well", is developed. The transmission probability versus energy is Lorentzian, near each quasi-local level, with a width that is simply related to the lifetime for escape from the local state, the wave-packet transit time, and the dynamical response time. The charge-accumulation effect is estimated. © 1986.
T.N. Morgan
Semiconductor Science and Technology
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