The DX centre
T.N. Morgan
Semiconductor Science and Technology
This article focuses on recent scanning tunnelling microscopy studies that have led to an improved understanding of the interaction of hydrogen with silicon surfaces. The structure and bonding of the Si(111)-7 * 7 and Si(100)-2 * 1 surfaces are described together with the adsorption and desorption of hydrogen from these surfaces. The role of hydrogen in the passivation of silicon surfaces and silicon chemical vapour deposition are also discussed. © Taylor & Francis Group, LLC.
T.N. Morgan
Semiconductor Science and Technology
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures