R.A. McCorkle, H.J. Vollmer
Review of Scientific Instruments
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
R.A. McCorkle, H.J. Vollmer
Review of Scientific Instruments
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
P.W. Li, H.K. Liou, et al.
Applied Physics Letters
Q.Y. Ma, E.S. Yang, et al.
Journal of Applied Physics