D.A. Herman Jr., J.C. Deluca, et al.
Journal of Applied Physics
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
D.A. Herman Jr., J.C. Deluca, et al.
Journal of Applied Physics
P.W. Li, H.K. Liou, et al.
Applied Physics Letters
Ulf Gennser, V.P. Kesan, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
E.S. Yang, Q.H. Hua, et al.
Applied Physics Letters