E.S. Yang, J.M. Brownlow
Journal of Applied Physics
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
E.S. Yang, J.M. Brownlow
Journal of Applied Physics
J.D. Cressler, D.D. Tang, et al.
Workshop on Low Temperature Semiconductor Electronics 1989
P.W. Li, E.S. Yang, et al.
IEEE Electron Device Letters
Q.Y. Ma, Chin-An Chang, et al.
Journal of Applied Physics