P. Voisin, J.C. Maan, et al.
Surface Science
Paper
Semiconductor superlattices by MBE and their characterization
Abstract
The deposition of semiconductor superlattices of GaAs-Ga1-x AlxAs and In1-xGaxAs-GaSb1-yAsy by molecular beam epitaxy is described. Their evaluations by high-energy electron diffraction and X-ray measurement are presented. Properties obtained from transport, optical and magneto experiments are summarized to characterize the electronic subband structure. © 1981.
Related
J.M. Hong, D.D. Awschalom, et al.
Journal of Crystal Growth
M. Ziesmann, D. Heitmann, et al.
Physical Review B
L.L. Chang, E. Mendez, et al.
Surface Science