L.L. Chang
NATO Advanced Study Institute 1984
Paper
Semiconductor superlattices by MBE and their characterization
Abstract
The deposition of semiconductor superlattices of GaAs-Ga1-x AlxAs and In1-xGaxAs-GaSb1-yAsy by molecular beam epitaxy is described. Their evaluations by high-energy electron diffraction and X-ray measurement are presented. Properties obtained from transport, optical and magneto experiments are summarized to characterize the electronic subband structure. © 1981.
Related
H. Sakaki, L.L. Chang, et al.
Solid State Communications
E. Mendez, W.I. Wang, et al.
Physical Review B
J.J. Quinn, U. Strom, et al.
Solid State Communications