Jae-Sung Rieh, Andreas Stricker, et al.
Proceedings of the IEEE
Paper
SiGe HBT without Selectively Implanted Collector (SIC) exhibiting f max = 310 GHz and BVCEo = 2 v
Abstract
Device characteristics for SiGe heterojunction bipolar transistors fabricated by a simplified process without selectively implanted collector (SIC), which exhibit peak fmax of 310 GHz at the collector-current density of 7 mA/μm2 and BVcEO of 2 V, are reported. For comparison, the characteristics of devices with various SIC doses are also presented, and the observed trends are discussed. © 2006 IEEE.
Related
Conference paper
Silicon photonics for on-chip trace-gas spectroscopy
William M. J. Green, Chi Xiong, et al.
NANOCOM 2016
Basanth Jagannathan, Mounir Meghelli, et al.
IEEE Electron Device Letters
Bo Peng, Chi Xiong, et al.
OFC 2017