Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Paper
Solution grown Ga1-xAlxAs superlattice structures
Abstract
An improved apparatus which employs a solution growth method called isothermal solution mixing (ISM) has been developed for the preparation of one-dimensional superlattice structures of Ga1-xAlxAs. Growth by this method occurs when two saturated solutions having different compositions are isothermally mixed together in the presence of a GaAs substrate. Structures have been made which exhibit a one-dimensional periodic variation in composition with a period of 1000 Å and 20 periods thick. © 1971.
Related
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics