A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Lattice defects in a metal modify the conduction-band carrier density at the defect site. Thus transport, past the scattering caused by thermal lattice vibrations, becomes easier (or harder) in the region of changed carrier density. The resulting transport field inhomogeneities have been discussed in earlier work on electromigration. This paper discusses the effect on the electronic resistivity. © 1976 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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