Conference paper
Polymer self assembly in semiconductor microelectronics
C.T. Black, K.W. Guarini, et al.
IEDM 2006
Self-assembled devices composed of periodic arrays of 10-nanometer-diameter cobalt nanocrystals display spin-dependent electron transport. Current-voltage characteristics are well described by single-electron tunneling in a uniform array. At temperatures below 20 kelvin, device magnetoresistance ratios are on the order of 10%, approaching the maximum predicted for ensembles of cobalt islands with randomly oriented preferred magnetic axes. Low-energy spin-flip scattering suppresses magnetoresistance with increasing temperature and bias-voltage.
C.T. Black, K.W. Guarini, et al.
IEDM 2006
C.T. Black
Applied Physics Letters
S. Anders, S. Sun, et al.
Microelectronic Engineering
Joseph M. Grogan, Jeung Hun Park, et al.
Microscopy and Microanalysis