Effect of the back gate conduction on 0.25 μm SOI devices
J.L. Pelloie, D.K. Sadana, et al.
IEDM 1994
Spin superlattices with alternating nonmagnetic and magnetic layers, in which a tunable spin-dependent potential exists, have been fabricated. We show that the ZnSe/Zn0.99Fe0.01Se system, in which field-induced spin splittings in both valence and conduction bands can become much larger than the residual zero-field potentials, exhibits spin superlattice behavior. Low-temperature magnetoreflectance experiments have been used to investigate the nature of these structures, verifying through field-dependent spin splitting and transition strengths that they are in fact true spin superlattices. © 1991 The American Physical Society.
J.L. Pelloie, D.K. Sadana, et al.
IEDM 1994
J. Warnock, D.D. Awschalom, et al.
Physical Review Letters
Baozhen Li, Paul Muller, et al.
IRPS 2015
J. Warnock, P.F. Lu, et al.
Bipolar Circuits and Technology Meeting 1989