Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Paper
Strain relaxation in GeSi layers with uniform and graded composition
Abstract
We have calculated inter-dislocation spacing and strain relaxation in stable and metastable strained GexSi1-x epilayers using an improved theory. Epilayers with graded Ge compositions are also considered. Strain relaxation on annealing MBE grown layers is measured and is found to agree with the calculated values. © 1991.
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