Zhen Zhang, F. Pagette, et al.
IEEE Electron Device Letters
Lattice spacing measurements of the (211)/(202), (020)/(013), and (111)/(102) reflections were used to calculate the residual stresses in a Ni monosilicide film after cooling from its formation temperature. The ability to measure stresses in crystalline materials using x-ray diffraction requires the use of appropriate x-ray elastic constants, which link the measured strain to the stress tensor of the grains that satisfy the diffraction condition. X-ray elastic constants were calculated in the Neerfeld-Hill (NH) limit for a polycrystalline aggregate composed of orthorhombic crystals. The anisotropy in grains that possess orthorhombic elasticity introduces significant variation in the stresses determined among the three sets of reflections. However, the in-plane stress calculated due to thermal expansion mismatch between NiSi and the underlying Si substrate shows a close correspondence to the average of x-ray measurements. © 2009 American Institute of Physics.
Zhen Zhang, F. Pagette, et al.
IEEE Electron Device Letters
Xindong Gao, Joakim Andersson, et al.
Electrochemical and Solid-State Letters
David B. Mitzi, Matthew Copel, et al.
TFTT 2004
Samuel Lambert-Milot, Simon Gaudet, et al.
JVSTA