Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
We have used medium-energy ion scattering to determine the structure of the arsenic-saturated Si(111) surface. Unlike the clean surface, which is reconstructed with a (7×7) symmetry, the arsenic chemisorbed surface exhibits a (1×1) symmetry at near monolayer coverages. Ion-scattering yields show a decrease in the number of displaced silicon atoms due to a partial removal of the reconstruction accompanied by some disorder. The arsenic-silicon spacing is relaxed outwards from the bulk silicon interplanar spacing by 0.2±0.1 AìŠ. © 1988 The American Physical Society.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
R. Ghez, J.S. Lew
Journal of Crystal Growth