Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The Ge(111)-c(2×8) and the Si(111)-(7×7) reconstructions are directly compared by medium-energy ion scattering. The c(2×8) surface is shown to induce considerably less atomic displacements than the (7×7) structure. The data are in good agreement with a simple adatom model for the c(2×8) reconstructed surface. © 1988 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
J. Tersoff
Applied Surface Science
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007