J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
The lattice site occupied by the boron and hydrogen atoms in hydrogenated crystalline silicon is investigated by use of ion channeling and nuclear-reaction analysis. After hydrogenation, boron atoms are found to be displaced from substitutional sites. Analysis of the data indicates that the shift is 0.220.04. The hydrogen atoms are found to preferentially occupy the bond-center site. These findings are consistent with a structure for the boron-hydrogen complex in which the hydrogen atom occupies a site between a silicon and a boron atom, while the boron atom relaxes back towards a threefold-coordinated position. The data are compared with recent predictions of the structure of the B-H complex in silicon. © 1987 The American Physical Society.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics