Studies of samples having shallow surface topography by the low-loss electron (LLE) method in the scanning electron microscope (SEM)

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is applied to samples that are right angles to the beam with a view to applications in the semiconductor metrology, inspection and review areas. Image is obtained by collecting electrons from a specimen in the forward direction with 100 to 500 eV energy loss.