A. Portavoce, R. Hull, et al.
Applied Physics Letters
Displacive adsorption of As on vicinal Si(001) surfaces has in the past been attributed to reduction of step-related (extrinsic) surface stress. Here we show images of As adsorption on flat Si(001), obtained with in situ low-energy electron microscopy, and with scanning tunneling microscopy. We find displacive adsorption even on micrometer-sized terraces, on which steps play no significant role. These new results reveal the role of intrinsic surface stress as a driving force for interfacial mixing. © 1992 The American Physical Society.
A. Portavoce, R. Hull, et al.
Applied Physics Letters
E.J. Van Loenen, J.E. Demuth, et al.
Physical Review Letters
S. Kodambaka, J.B. Hannon, et al.
M&M 2006
R.M. Tromp, M.C. Reuter
Physical Review Letters