N.V. Medhekar, V.B. Shenoy, et al.
Physical Review Letters
Displacive adsorption of As on vicinal Si(001) surfaces has in the past been attributed to reduction of step-related (extrinsic) surface stress. Here we show images of As adsorption on flat Si(001), obtained with in situ low-energy electron microscopy, and with scanning tunneling microscopy. We find displacive adsorption even on micrometer-sized terraces, on which steps play no significant role. These new results reveal the role of intrinsic surface stress as a driving force for interfacial mixing. © 1992 The American Physical Society.
N.V. Medhekar, V.B. Shenoy, et al.
Physical Review Letters
F.M. Ross, C.-Y. Wen, et al.
Philosophical Magazine
F.M. Ross, J. Tersoff, et al.
Journal of Electron Microscopy
E.A. Stach, K.W. Schwarz, et al.
Physical Review Letters