Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15)
Abstract
Photoreflectance has been used to measure the direct band gap of InxGa1-xAs (x=0.06 and 0.15) over a wide temperature range from 18 to 873 K. We have evaluated the parameters that describe the temperature dependence of the band gap and broadening function. © 1991 The American Physical Society.
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