Physical Review Letters

Paper

27 Aug 2003

Tersoff et al. Reply: Comparison of Continuum and Step Models for SiGe Islands

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Abstract

A Reply to the Comment by V.M. Kaganer. © 2003 The American Physical Society.

Paper

Enhanced solubility of impurities and enhanced diffusion near crystal surfaces

J. Tersoff

Physical Review Letters

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Chemical order in amorphous silicon carbide

J. Tersoff

Physical Review B

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Continuum theory for strained epitaxial islands

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Growth kinetics of CoSi₂ and Ge islands observed with in situ transmission electron microscopy

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