J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Current, voltage, temperature (I-V-T) and conductance, voltage, temperature (G-V-T) as well as switching time measurements have been made on the switching states of bistable amorphous niobium pentoxide films. The measurements are indicative of a charge transfer mechanism occurring prior to switching. I-V-T and G-V-T measurements on the switching states for temperatures in the range 1.3 to 4.2°K as well as at 77°K are discussed. © 1972.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Ming L. Yu
Physical Review B
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993