A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
We describe a simple tight-binding model which gives qualitative understanding and quantitative estimates of the electronic energy levels of several classes of impurities, defects and impurity complexes in SiO2. © 1982.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
J. Tersoff
Applied Surface Science
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
L.K. Wang, A. Acovic, et al.
MRS Spring Meeting 1993