J. Tersoff
Applied Surface Science
We describe a simple tight-binding model which gives qualitative understanding and quantitative estimates of the electronic energy levels of several classes of impurities, defects and impurity complexes in SiO2. © 1982.
J. Tersoff
Applied Surface Science
David B. Mitzi
Journal of Materials Chemistry
T. Schneider, E. Stoll
Physical Review B
Lawrence Suchow, Norman R. Stemple
JES