R. Ghez, J.S. Lew
Journal of Crystal Growth
Paper
The electronic structure of impurities and defects in SiO2
Abstract
We describe a simple tight-binding model which gives qualitative understanding and quantitative estimates of the electronic energy levels of several classes of impurities, defects and impurity complexes in SiO2. © 1982.
Related
Conference paper
True 3-D displays for avionics and mission crewstations
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules