R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
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EMC 2011
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