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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The atomic structure of Si(001)/SiO2 interfaces, produced by the oxidation of initially smooth Si surfaces, is discussed. Soft X-ray spectroscopy shows the detailed interfacial atomic configuration to depend sensitively on the preparation conditions. © 1989.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
A. Gangulee, F.M. D'Heurle
Thin Solid Films
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials