Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Theory of free carrier absorption in InSb
Abstract
The free carrier absorption by electrons in InSb is calculated, for optical mode scattering, in terms of the Kane model. Valence band states are included in the intermediate states. The wavelength dependence is close to λ3. Comparison with experimental data is made and discussed. © 1971.
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