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Photomask and Next-Generation Lithography Mask Technology 2004
This paper presents a critical review of theoretical studies of spin-dependent conductivity in GMR (giant magnetoresistive) materials. Earlier studies used relatively simple models of the electronic states and energy-band structure. Several more recent calculations of electronic transport in layered materials are based on ab initio treatment of the spin-dependent energy bands and Fermi surface. By including realistic energy-band structures, these studies have been able to make quantitative comparisons of alternative mechanisms for enhanced magnetoresistance and to explain the relative importance of spin-dependent scattering at interfaces.
Hans Becker, Frank Schmidt, et al.
Photomask and Next-Generation Lithography Mask Technology 2004
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RecSys 2012
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