Mukesh Khare, S. Ku, et al.
IEDM 2002
Paper
Thermal stability of TiSi2 on mono- and polycrystalline silicon
Abstract
Thermal stability of TiSi2 on mono- and polycrystalline silicon was investigated by cross-sectional transmission electron microscopy and high-resolution electron energy loss spectroscopy. Additional heat treatments after silicide formation result in a rough silicide/silicon interface, discontinuity of the metal silicide film, and a penetration of silicide into silicon/polycrystalline silicon substrates. Plausible explanations for these observations are presented.
Related
Conference paper
Doping of n+ and p+ polysilicon in a dual-gate CMOS process
C.Y. Wong, J.Y.-C. Sun, et al.
IEDM 1988
Conference paper
0.5 μm CMOS device design and characterization
H.I. Hanafi, M.R. Wordeman, et al.
ESSDERC 1987
Bijan Davari, Wen-Hsing Chang, et al.
IEEE T-ED